Phase-change device, related manufacturing method, and related electronic device

ABSTRACT

A method for manufacturing a phase-change device may include the following steps: preparing a substrate; preparing a first dielectric layer, which may be positioned on the substrate; preparing a first electrode, which may be positioned in the first dielectric layer; forming a phase-change material layer, which may overlap the first electrode; processing (e.g., etching) the phase-change material layer to form a phase-change member, which may be electrically connected to the first electrode; forming an etch-stop layer, which may overlap and/or cover the phase-change member; forming an intermediary layer, which may be positioned on the etch-stop layer; forming a second dielectric layer, which may be positioned on the intermediary layer; and forming a second electrode, which may extend through the second dielectric layer, the intermediary layer, and the etch-stop layer and may be electrically connected to the phase-change member.

CROSS-REFERENCE TO RELATED APPLICATION

This is a divisional application of U.S. patent application Ser. No.14/614,099 filed on Feb. 4, 2015, which application claims priority toand benefit of Chinese Patent Application No. 201410205887.8, filed on15 May 2014, the disclosure of each application is incorporated hereinby reference in their entirety.

BACKGROUND OF THE INVENTION

The present invention is related to a phase-change device, a method formanufacturing the phase-change device, and an electronic device thatincludes the phase-change device.

A phase-change device may include a phase-change member, which may beformed of a phase-change material, for performing one or more particularfunctions. For example, a phase-change memory device may include aphase-change member for performing functions related to data storage.

In a process for manufacturing a phase-change memory device, aninter-metal dielectric (IMD) layer may be directly formed on aphase-change material layer that is used for forming a phase-changemember. Typically, the IMD layer may be formed of fluorosilicate glass(FSG), and the phase-change material layer may be formed ofgermanium-antimony-tellurium (Ge₂Sb₂Te₅ or GST). Because of materialproperties, FSG and GST may not sufficiently securely adhere to eachother. Therefore, in the process for manufacturing for the phase-changememory device, the IMD layer may be undesirably detached from thephase-change member, and the phase-change member may be undesirablyetched when the IMD layer is etched. As a result, the quality of thephase-change memory device may be unsatisfactory, and the yieldassociated with the manufacturing process may be undesirably low.

SUMMARY

An embodiment of the present invention may be related to a method formanufacturing a phase-change device. The method may include thefollowing steps: preparing a substrate; preparing a first dielectriclayer, which may be positioned on the substrate; preparing a firstelectrode, which may be positioned in the first dielectric layer;forming a phase-change material layer, which may overlap the firstelectrode; processing (e.g., etching) the phase-change material layer toform a phase-change member, which may be electrically connected to thefirst electrode; forming an etch-stop layer, which may overlap and/orcover the phase-change member; forming an intermediary layer, which maybe positioned on the etch-stop layer; forming a second dielectric layer,which may be positioned on the intermediary layer; and forming a secondelectrode, which may extend through the second dielectric layer, theintermediary layer, and the etch-stop layer and may be electricallyconnected to the phase-change member.

The substrate may be a front-end-of-line (FEOL) member that may includeone or more of a semiconductor substrate, a transistor, a metal layer,an electronic component, an interconnect structure, etc.

The etch-stop layer may be formed of silicon nitride. The intermediarylayer may be formed of a silicon-rich oxide material. The seconddielectric layer may be formed of at least one of an undoped silicateglass material and a fluorine-doped silica glass material.

The etch-stop layer may directly contact two opposite sides of thephase-change member.

A portion of the etch-stop layer may overlap a top side of thephase-change member in a direction perpendicular to a bottom surface ofthe substrate. The portion of the etch-stop layer may be spaced from thephase-change member, e.g., separated from the phase-change member by aprotective layer. The second electrode may be formed after the portionof the etch-stop layer has been removed.

The method may include the following steps: forming a protectivematerial layer on the phase-change material layer; processing (e.g.,etching) the protective material layer to form a protective layer,wherein the protective layer may directly contact the phase-changemember. The protective material layer and the phase-change materiallayer may be etched in a same process step using a same etchant. Theprotective layer may be formed of titanium nitride.

The etch-stop layer may directly contact two opposite sides of theprotective layer. A portion of the etch-stop layer may directly contacta top side of the protective layer. The second electrode may be formedafter the portion of the etch-stop layer has been removed.

An etching process may be performed to form a first hole through thesecond dielectric layer and the intermediary layer. A subsequent etchingprocess may be performed to form a second hole through the etch-stoplayer. The second electrode may be formed in a combination of the firsthole and the second hole.

An embodiment of the invention may be related to a phase-change device.The phase-change device may include the following elements: a substrate;a first dielectric layer, which may be positioned on the substrate; afirst electrode, which may be positioned in the first dielectric layer;a second dielectric layer, which may overlap the first dielectric layer;a second electrode, wherein a portion of the second electrode may bepositioned in the second dielectric layer; a phase-change memberelectrically connected to each of the first electrode and the secondelectrode; an etch-stop layer positioned between the phase-change memberand the second dielectric layer; and an intermediary layer positionedbetween the etch-stop layer and the second dielectric layer.

The second electrode may extend through the intermediary layer and theetch-stop layer. The intermediary layer may be formed of a silicon-richoxide material. The etch-stop layer may directly contact two oppositesides of the phase-change member.

Two top portions of the etch-stop layer may directly contact twoopposite sides of the second electrode. The two top portions of theetch-stop layer may overlap a top side of the phase-change member in adirection perpendicular to a bottom surface of the substrate.

The etch-stop layer may directly contact each of the second electrode,the intermediary layer, and the phase-change member.

A first portion of the etch-stop layer may be positioned between thephase-change member and a first portion of the intermediary layer in adirection perpendicular to a bottom surface of the substrate. A secondportion of the etch-stop layer may be positioned between thephase-change member and a second portion of the intermediary layer in adirection parallel to a bottom surface of the substrate

The phase-change device may include a protective layer that may bepositioned between the etch-stop layer and the phase-change member andmay be positioned between the second electrode and the phase-changemember.

The protective layer may directly contact each of the second electrode,the phase-change member, and the etch-stop layer.

An embodiment of the present invention may be related to an electronicdevice. The electronic device may include an electronic component and aphase-change device electrically connected to the electronic component.The electronic device may have one or more of the features andadvantages associated with the aforementioned method and phase-changedevice.

According to embodiments of the invention, in a process formanufacturing a phase-change device, an etch-stop layer may be providedto protect a phase-change member, and an intermediary layer may beprovided to facilitate bonding between elements that overlap thephase-change member. Therefore, satisfactory quality of the phase-changemember may be substantially maintained, and satisfactory bonding betweenelements in the phase-change device may be enabled. Advantageously,satisfactory quality of the phase-change device and a satisfactory yieldof the manufacturing process may be substantially ensured.

The above summary is related to some of many embodiments of theinvention disclosed herein and is not intended to limit the scope of theinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A, FIG. 1B, FIG. 1C, FIG. 1D, and FIG. 1E show schematiccross-sectional views that illustrate elements and/or structures formedin a method for manufacturing a phase-change device in accordance withone or more embodiments of the present invention.

FIG. 2 shows a flowchart that illustrates a method for manufacturing aphase-change device in accordance with one or more embodiments of thepresent invention.

FIG. 3 shows a schematic cross-sectional view that illustrates elementsand/or structures of a phase-change device in accordance with one ormore embodiments of the present invention.

DETAILED DESCRIPTION

Example embodiments of the present invention are described withreference to the accompanying drawings. As those skilled in the artwould realize, the described embodiments may be modified in variousdifferent ways, all without departing from the spirit or scope of thepresent invention. Embodiments of the present invention may be practicedwithout some or all of these specific details. Well known process stepsand/or structures may not have been described in detail in order to notunnecessarily obscure the present invention.

The drawings and description are illustrative and not restrictive. Likereference numerals may designate like (e.g., analogous or identical)elements in the specification. Repetition of description may be avoided.

The relative sizes and thicknesses of elements shown in the drawings arefor facilitate description and understanding, without limiting thepresent invention. In the drawings, the thicknesses of some layers,films, panels, regions, etc., may be exaggerated for clarity.

Illustrations of example embodiments in the figures may representidealized illustrations. Variations from the shapes illustrated in theillustrations, as a result of, for example, manufacturing techniquesand/or tolerances, may be possible. Thus, the example embodiments shouldnot be construed as limited to the shapes or regions illustrated hereinbut are to include deviations in the shapes. For example, an etchedregion illustrated as a rectangle may have rounded or curved features.The shapes and regions illustrated in the figures are illustrative andshould not limit the scope of the example embodiments.

Although the terms “first”, “second”, etc. may be used herein todescribe various elements, these elements, should not be limited bythese terms. These terms may be used to distinguish one element fromanother element. Thus, a first element discussed below may be termed asecond element without departing from the teachings of the presentinvention. The description of an element as a “first” element may notrequire or imply the presence of a second element or other elements. Theterms “first”, “second”, etc. may also be used herein to differentiatedifferent categories or sets of elements. For conciseness, the terms“first”, “second”, etc. may represent “first-category (or first-set)”,“second-category (or second-set)”, etc., respectively.

If a first element (such as a layer, film, region, or substrate) isreferred to as being “on”, “neighboring”, “connected to”, or “coupledwith” a second element, then the first element can be directly on,directly neighboring, directly connected to, or directly coupled withthe second element, or an intervening element may also be presentbetween the first element and the second element. If a first element isreferred to as being “directly on”, “directly neighboring”, “directlyconnected to”, or “directed coupled with” a second element, then nointended intervening element (except environmental elements such as air)may also be present between the first element and the second element.

Spatially relative terms, such as “beneath”, “below”, “lower”, “above”,“upper”, and the like, may be used herein for ease of description todescribe one element or feature's spatial relationship to anotherelement(s) or feature(s) as illustrated in the figures. It will beunderstood that the spatially relative terms may encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device may be otherwise oriented (rotated 90degrees or at other orientations), and the spatially relativedescriptors used herein should be interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to limit the invention. As used herein,the singular forms, “a”, “an”, and “the” may indicate plural forms aswell, unless the context clearly indicates otherwise. The terms“includes” and/or “including”, when used in this specification, mayspecify the presence of stated features, integers, steps, operations,elements, and/or components, but may not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups.

Unless otherwise defined, terms (including technical and scientificterms) used herein have the same meanings as commonly understood by oneof ordinary skill in the art related to this invention. Terms, such asthose defined in commonly used dictionaries, should be interpreted ashaving meanings that are consistent with their meanings in the contextof the relevant art and should not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

The term “connect” may mean “electrically connect”. The term “insulate”may mean “electrically insulate”. The term “conductive” may mean“electrically conductive”

Unless explicitly described to the contrary, the word “comprise” andvariations such as “comprises”, “comprising”, “include”, or “including”may imply the inclusion of stated elements but not the exclusion ofother elements.

Various embodiments, including methods and techniques, are described inthis disclosure. Embodiments of the invention may also cover an articleof manufacture that includes a non-transitory computer readable mediumon which computer-readable instructions for carrying out embodiments ofthe inventive technique are stored. The computer readable medium mayinclude, for example, semiconductor, magnetic, opto-magnetic, optical,or other forms of computer readable medium for storing computer readablecode. Further, the invention may also cover apparatuses for practicingembodiments of the invention. Such apparatus may include circuits,dedicated and/or programmable, to carry out operations pertaining toembodiments of the invention. Examples of such apparatus include ageneral purpose computer and/or a dedicated computing device whenappropriately programmed and may include a combination of acomputer/computing device and dedicated/programmable hardware circuits(such as electrical, mechanical, and/or optical circuits) adapted forthe various operations pertaining to embodiments of the invention.

FIG. 1A, FIG. 1B, FIG. 1C, FIG. 1D, and FIG. 1E show schematiccross-sectional views that illustrate elements and/or structures formedin a method for manufacturing a phase-change device in accordance withone or more embodiments of the present invention. FIG. 2 shows aflowchart that illustrates a method for manufacturing the phase-changedevice in accordance with one or more embodiments of the presentinvention.

Referring to FIG. 2, the method may include steps S201, S202, S203,S204, and S205.

Referring to FIG. 2 and FIG. 1A, the step S201 may include the followingsub-steps: preparing a substrate 100; preparing a first dielectric layer1010, which may be positioned on the substrate 100; and preparing afirst electrode 101, which may be positioned in the first dielectriclayer 1010.

The substrate 100 may be a front-end-of-line (FEOL) member that mayinclude one or more of a semiconductor substrate, a conductive member, atransistor, a metal layer, an electronic component, an interconnectstructure, etc. The first electrode 101 may be electrically connected toone or more electronic components in the substrate 100 through aconductive member, which may be positioned in a contact hole.

The first dielectric layer 1010 may be formed of silicon oxide and/orone or more other suitable materials. The first electrode 101 may beformed of tungsten and/or one or more other suitable materials.

A process for forming the first electrode 101 may include the followingsteps: etching the first dielectric layer 1010 to form a hole; providinga conductive material, e.g., a metal material, in the hole for formingthe first electrode 101; and performing a polishing process, e.g., achemical-mechanical polishing (CMP) process to remove excess materialand/or to planarize the top surface of the first electrode 101.

Referring to FIG. 2, FIG. 1A, and FIG. 1B, the step S202 may include thefollowing sub-steps: forming a phase-change material layer 1020, whichmay overlap the first electrode 101; and processing (e.g., etching) thephase-change material layer 1020 to form a phase-change member 102. Thephase-change member 102 may be electrically connected to the firstelectrode 101. The phase-change member 102 may be formed of GST and/orone or more other suitable materials.

The step S202 may also include the following sub-steps: forming aprotective material layer 1030 on the phase-change material layer 1020;processing (e.g., etching) the protective material layer 1030 to form aprotective layer 103. The protective layer 103 may directly contact thephase-change member 102. The protective material layer 1030 and thephase-change material layer 1020 may be processed (e.g., etched) in asame etching process using a same etchant, such that both thephase-change member 102 and the protective layer 103 may be formed as aresult of the etching process. The protective layer 103 may beconfigured to protect the phase-change member 102. The protective layer103 may be formed of a conductive material, such as titanium nitrideand/or one or more other suitable conductive materials.

Referring to FIG. 2, FIG. 1B, FIG. 1C, and FIG. 1D, the step S203 mayinclude the following sub-steps: forming an etch-stop layer 104, whichmay overlap and/or cover the phase-change member 102; and forming anintermediary layer 105, which may be positioned on the etch-stop layer104.

Two opposite sections of the etch-stop layer 104 may directly contacttwo opposite sides of the phase-change member 102. The phase-changemember 102 may be positioned between the two opposite sections of theetch-stop layer 104. A top section of the etch-stop layer 104 mayoverlap a top side of the phase-change member 102 in a directionperpendicular to a bottom surface of the substrate 100. The top sectionof the etch-stop layer 104 may be spaced from the phase-change member102, e.g., separated from the phase-change member 102 by the protectivelayer 103.

The opposite sections of the etch-stop layer 104 may directly contacttwo opposite sides of the protective layer 103. The protective layer 103may be positioned between the two opposite sections of the etch-stoplayer 104. The top section of the etch-stop layer 104 may overlap (anddirectly contact) a top side of the protective layer 103 in thedirection perpendicular to the bottom surface of the substrate 100.

Two opposite sections of the intermediary layer 105 may directly contactthe two opposite sections of the etch-stop layer 104. The two oppositesections of the etch-stop layer 104 may be positioned between the twoopposite sections of the intermediary layer 105. A top section of theintermediary layer 105 may overlap (and directly contact) the topsection of the etch-stop layer 104 and may overlap the top side of thephase-change member 102 in the direction perpendicular to the bottomsurface of the substrate 100.

The etch-stop layer 104 may be formed through a deposition processand/or one or more other suitable processes. The etch-stop layer 104 maybe formed of silicon nitride and/or one or more other suitablematerials. The etch-stop layer 104 may protect the phase-change member102 from unintended etching and/or unwanted damage, e.g., in a processof etching the subsequently formed second dielectric layer 106(illustrated in FIG. 1D).

The intermediary layer 105 may be formed through a deposition processand/or one or more other suitable processes. The intermediary layer 105may be formed of a silicon-rich oxide material and/or one or more othersuitable materials. The intermediate layer 105 may substantiallysecurely adhere to the etch-stop layer 104. The intermediary layer 105may enhance adhesion between the etch-stop layer 104 and thesubsequently formed second dielectric layer 106 (illustrated in FIG.1D), such that the second dielectric layer 106 may be substantiallysecured in the phase-change device.

The etch-stop layer 104 and the intermediary layer 105 may enable thephase-change device to have satisfactory quality and may enable thephase-change device manufacturing process to have a satisfactory yield.

Referring to FIG. 2 and FIG. 1D, the step S204 may include forming asecond dielectric layer 106, which may be positioned on the intermediarylayer 105. The second dielectric layer 106 may be formed through adeposition process and/or one or more other suitable processes. Thesecond dielectric layer 106 may be formed of at least one of an undopedsilicate glass material and a fluorine-doped silica glass material. Thesecond dielectric layer 106 may substantially securely adhere to theintermediary layer 105.

Referring to FIG. 2, FIG. 1D, and FIG. 1E, the step S205 may includeforming a second electrode 107, which may extend through the seconddielectric layer 106, the intermediary layer 105, and the etch-stoplayer 104 and may be electrically connected to the phase-change member102.

The step S205 may include performing an etching process to form a firsthole through the second dielectric layer 106 and the intermediary layer105. A portion of the top section of the intermediary layer 105 (whichmay overlap the top side of the phase-change member 102) may be removedin the etching process for forming the first through-hole.

The step S205 may further include performing a subsequent etchingprocess to form a second hole through the etch-stop layer 104. A portionof the top section of the etch-stop layer 104 (which may overlap the topside of the phase-change member 102) may be removed in the etchingprocess for forming the second through-hole. An etch rate for theetch-stop layer 104 may be substantially higher than an etch rate forthe phase-change member 102 (and/or the protective layer 103) in theetching process for forming the second through-hole.

During the etching processes, the phase-change member 102 may besubstantially protected by the etch-stop layer 104 (and the protectivelayer 103). Advantageously, satisfactory quality of the phase-changemember 102 may be substantially maintained.

The step S205 may further include the subsequent sub-steps: providing aconductive material (e.g., a metal material) in a combination of thefirst through-hole and the second through-hole for forming the secondelectrode 107; and performing a polishing process, e.g., achemical-mechanical polishing (CMP) process to remove excess materialand/or to planarize the top surface of the second electrode 107. Thesecond electrode 107 may be formed of aluminum and/or one or more othersuitable conductive materials.

The second electrode 107 may be electrically connected to thephase-change member 102 through the protective layer 103. The secondelectrode 107 may be positioned (and secured) between at least twoportions of the intermediary layer 105, between at least two portions ofthe etch-stop layer 104, and between at least two portions of the seconddielectric layer 106. The intermediary layer 105, the etch-stop layer104, etc., may enable a substantially secure combination of the elementspositioned above the substrate 100. Advantageously, satisfactorystructural robustness of the phase-change device may be substantiallyensured.

FIG. 3 shows a schematic cross-sectional view that illustrates elementsand/or structures of a phase-change device in accordance with one ormore embodiments of the present invention. The phase-change device mayhave one or more of the features and advantages discussed above withreference to FIG. 1A, FIG. 1B, FIG. 1C, FIG. 1D, FIG. 1E, and FIG. 2.

Referring to FIG. 3, the phase-change device may include the followingelements: a substrate 100, which may be an FEOL member; a firstdielectric layer 1010, which may be positioned on the substrate 100; afirst electrode 101, which may be positioned in the first dielectriclayer 1010; a second dielectric layer 106, which may overlap the firstdielectric layer 1010; a second electrode 107, wherein a portion of thesecond electrode 107 may be positioned in the second dielectric layer106; a phase-change member 102, which may be electrically connected toeach of the first electrode 101 and the second electrode 107; anetch-stop layer 104, which may be positioned between the phase-changemember 102 and the second dielectric layer 106; and an intermediarylayer 105, which may be positioned between the etch-stop layer 104 andthe second dielectric layer 106. The second electrode 107 may extendthrough the intermediary layer 105 and the etch-stop layer 104.

The phase-change device may include a protective layer 103 that may bepositioned between the etch-stop layer 104 and the phase-change member102 and may be positioned between the second electrode 107 and thephase-change member 102. The protective layer 103 may directly contacteach of the second electrode 107, the phase-change member 102, and theetch-stop layer 104.

The etch-stop layer 104 may directly contact each of the secondelectrode 107, the intermediary layer 105, the phase-change member 102,and the protective layer 103. The etch-stop layer 104 may directlycontact two opposite sides of the phase-change member 102. The etch-stoplayer 104 may directly contact two opposite sides of the protectivelayer 103. Two top portions of the etch-stop layer 104 may directlycontact two opposite sides of the second electrode 107. The two topportions of the etch-stop layer 104 may overlap (and may directlycontact) a top side of the phase-change member 102 in a directionperpendicular to a bottom surface of the substrate 100. The two topportions of the etch-stop layer 104 may overlap and directly contact atop side of the protective layer 103 in the direction perpendicular tothe bottom surface of the substrate.

A first portion (e.g., a horizontal section) of the etch-stop layer 104may be positioned between the phase-change member 102 and a firstportion (e.g., a horizontal section) of the intermediary layer 105 inthe direction perpendicular to the bottom surface of the substrate 100.A second portion (e.g., a vertical section) of the etch-stop layer 104may be positioned between the phase-change member 102 and a secondportion (e.g., a vertical section) of the intermediary layer 105 in adirection parallel to the bottom surface of the substrate 100

The intermediary layer 105 may be formed of a silicon-rich oxidematerial and may enable substantially secure adhesion between the seconddielectric layer 106 and the etch-stop layer 104.

An embodiment of the present invention may be related to an electronicdevice. The electronic device may include an electronic component and aphase-change device electrically connected to the electronic component.The electronic device may have one or more of the features andadvantages discussed above with reference to FIG. 1A, FIG. 1B, FIG. 1C,FIG. 1D, FIG. 1E, FIG. 2, and FIG. 3.

In an embodiment, the electronic device may be or may include aphase-change memory device.

In an embodiment, the electronic device may be or may include one ormore of a mobile phone, a tablet computer, a notebook computer, anetbook, a game console, a television, a video compact disc (VCD)player, a digital video disc (DVD) player, a navigation device, acamera, a camcorder, a voice recorder, an MP3 player, an MP4 player, aportable game device, etc.

In an embodiment, the electronic device may be or may include anintermediate product (e.g., a mobile phone main board) or moduleincluding a phase-change device that may have one or more of thefeatures and advantages discussed above.

According to embodiments of the invention, in a process formanufacturing a phase-change device, an etch-stop layer may be providedto protect a phase-change member, and an intermediary layer may beprovided to facilitate bonding between elements that overlap thephase-change member. Therefore, satisfactory quality of the phase-changemember may be substantially maintained, and satisfactory bonding betweenelements in the phase-change device may be enabled. Advantageously,satisfactory quality of the phase-change device and a satisfactory yieldof the manufacturing process may be substantially ensured.

While this invention has been described in terms of several embodiments,there are alterations, permutations, and equivalents, which fall withinthe scope of this invention. It should also be noted that there are manyalternative ways of implementing the methods and apparatuses of thepresent invention. Furthermore, embodiments of the present invention mayfind utility in other applications. The abstract section is providedherein for convenience and, due to word count limitation, is accordinglywritten for reading convenience and should not be employed to limit thescope of the claims. It is therefore intended that the followingappended claims be interpreted as including all such alterations,permutations, and equivalents as fall within the true spirit and scopeof the present invention.

What is claimed is:
 1. A phase-change device comprising: a substrate; afirst dielectric layer positioned on the substrate; a first electrodepositioned in the first dielectric layer; a second dielectric layeroverlapping the first dielectric layer; a second electrode, wherein aportion of the second electrode is positioned in the second dielectriclayer; a phase-change member electrically connected to each of the firstelectrode and the second electrode; an etch-stop layer positionedbetween the phase-change member and the second dielectric layer; and anintermediary layer positioned between the etch-stop layer and the seconddielectric layer, wherein the second electrode extends through theintermediary layer and the etch-stop layer, and wherein the secondelectrode is electrically connected to the phase-change member withoutdirectly contacting the phase-change member.
 2. The phase-change deviceof claim 1, wherein the etch-stop layer contacts two opposite sides ofthe phase-change member.
 3. The phase-change device of claim 1, whereinthe etch-stop layer contacts each of the second electrode, theintermediary layer, and the phase-change member.
 4. The phase-changedevice of claim 1, wherein a first portion of the etch-stop layer ispositioned between the phase-change member and a first portion of theintermediary layer in a direction perpendicular to a bottom surface ofthe substrate, and wherein a second portion of the etch-stop layer ispositioned between the phase-change member and a second portion of theintermediary layer in a direction parallel to a bottom surface of thesubstrate.
 5. The phase-change device of claim 1, wherein theintermediary layer is formed of a silicon oxide material.
 6. Thephase-change device of claim 1, further comprising a protective layerpositioned between the etch-stop layer and the phase-change member andpositioned between the second electrode and the phase-change member. 7.The phase-change device of claim 6, wherein the protective layercontacts each of the second electrode, the phase-change member, and theetch-stop layer.
 8. An electronic device comprising: an electroniccomponent; and a phase-change device electrically connected to theelectronic component, wherein the phase-change device comprises: a firstdielectric layer; a first electrode, which is positioned in the firstdielectric layer; a second dielectric layer, which overlaps the firstdielectric layer; a second electrode, wherein a portion of the secondelectrode is positioned in the second dielectric layer; a phase-changemember electrically connected to each of the first electrode and thesecond electrode; an etch-stop layer positioned between the phase-changemember and the second dielectric layer; and an intermediary layerpositioned between the etch-stop layer and the second dielectric layer,wherein the second electrode extends through the intermediary layer andthe etch-stop layer, and wherein the second electrode is electricallyconnected to the phase-change member without directly contacting thephase-change member.